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Quantitative determination of charge transfer parameters of photorefractive BaTiO3 : Rh from EPR-based defect studies

机译:从基于EpR的缺陷研究中定量测定光折变BaTiO3:Rh的电荷转移参数

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摘要

Optical absorption bands can be used as fingerprints of defects and their charge states in insulators and semiconductors. On the basis of the photochromicity usually shown by such materials, a method is introduced by which the optical bands are assigned to the defects and their charge states. It is based on simultaneous measurements of the light-induced changes of the optical absorption and of the corresponding EPR signals. Moreover, indirectly optical bands of EPR-silent defects can also be labelled in this way, strongly widening the scope of EPR based defect studies. We apply this method to the infrared-sensitive photorefractive system BaTiO3:Rh, where illumination leads to recharging among the valence states Rh5+, Rh4+ and Rh3+. The values of all parameters governing the charge transfers responsible are inferred from the magnitude of the absorption bands, the absolute determination of their absorption cross-sections and the kinetics of the absorption changes under illumination. In contrast to previous investigations, these parameters are deduced independently of photorefractive measurements.
机译:光学吸收带可以用作绝缘体和半导体中缺陷及其电荷状态的指纹。基于这种材料通常显示的光致变色,引入一种方法,通过该方法将光带分配给缺陷及其电荷状态。它基于同时测量光吸收和相应EPR信号的光诱导变化。此外,也可以通过这种方式间接标记EPR沉默缺陷的光学波段,从而大大扩展了基于EPR的缺陷研究的范围。我们将此方法应用于红外敏感的光折变系统BaTiO3:Rh,其中照明导致价态Rh5 +,Rh4 +和Rh3 +之间的充电。从吸收带的大小,吸收带的横截面的绝对确定以及在光照下吸收变化的动力学可以推断出控制负责的电荷转移的所有参数的值。与以前的研究相反,这些参数的推导独立于光折变测量。

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